Center for Materials Research

Deep Reactive Ion Etching

Oxford Plasmalab 100

This machine has an inductively coupled plasma source and an automatic load lock and is able to rapidly etch anisotropically. We have CF4, SF6, He, Ar and liquid N2 currently available for process gasses. 

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Center for Materials Research, PO Box 642711, Washington State University, Pullman, WA, 99164-2711 USA